Simple and high-yield method for synthesizing single-crystal GaN nanowires

被引：101

作者：

Tang, CC ^{[1
]}

Fan, SS ^{[1
]}

Dang, HY ^{[1
]}

Li, P ^{[1
]}

Liu, YM ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 13期

关键词：

D O I：

10.1063/1.1312853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple and high-yield method involving vapor-liquid-solid wire-like growth mechanism was developed for the synthesis of GaN nanowires. In this process, the mixture of Ga and SiO2 reacted with ammonia in the presence of the Fe2O3 catalyst supported by Al2O3. The x-ray powder diffraction measurement and transmission electron microscopy observations confirmed that the synthesized GaN nanowires are single-crystal hexagonal wurtzite structure with diameters ranged from 10 to 50 nm and lengths up to several micrometers. Based on the fact that a small Fe dominant particle attached to one end of some nanowires, a growth model of the GaN nanowires was proposed. (C) 2000 American Institute of Physics. [S0003-6951(00)02639-5].

引用

页码：1961 / 1963

页数：3

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