ZnO single nanowire-based UV detectors

被引:122
作者
Das, Sachindra Nath [1 ]
Moon, Kyeong-Ju [1 ]
Kar, Jyoti Prakash [1 ]
Choi, Ji-Hyuk [1 ]
Xiong, Junjie [1 ]
Lee, Tae Il [1 ]
Myoung, Jae-Min [1 ]
机构
[1] Yonsei Univ, Dept Mat Sci & Engn, Informat & Elect Mat Res Lab, Seoul 120749, South Korea
关键词
SCHOTTKY DIODES; SENSOR;
D O I
10.1063/1.3464287
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this report, ZnO single nanowire (NW)-based devices were fabricated on the same nanowire by e-beam lithography so that both sides had Ohmic contact and one side had Schottky contact. Information about the mechanism for low-power UV detection by these devices was unambiguously provided by I-V measurements. Adsorption and desorption of oxygen molecules at the NW surface are responsible for the UV detection by the device with Ohmic contacts on both sides. Barrier height modulations and interface states are responsible for UV detection by the device with Schottky contact on one side. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3464287]
引用
收藏
页数:3
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