Semiconductor quantum-dot nanostructures: Their application in a new class of infrared photodetectors

被引:109
作者
Towe, E [1 ]
Pan, D [1 ]
机构
[1] Univ Virginia, Lab Opt & Quantum Elect, Charlottesville, VA 22903 USA
关键词
intersublevel infrared photodetectors; nanostructures; normal-incidence detectors; quantum dots; self-assembled dots; zero-dimensional space;
D O I
10.1109/2944.865096
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Semiconductor quantum-dot nanostructures are interesting objects for fundamental as well as practical reasons. fundamentally, they can form the basis of systems in which to study the quantum mechanics of electrons confined in zero-dimensional (0-D) space. In practice, the dots can be embedded in the active regions of a new class of electronic and optoelectronic devices with novel functionalities. This paper reviews the state-of-the-art in the use of these objects in infrared detectors. It describes the progress, challenges, and projections for continued development of normal-incidence intersublevel detectors operating in the spectral region between 6 and 20 mu m.
引用
收藏
页码:408 / 421
页数:14
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