High-Al-content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy

被引：50

作者：

Natali, F

Byrne, D

Dussaigne, A

Grandjean, N

Massies, J

Damilano, B

机构：

[1] CNRS, CRHEA, F-06560 Sophia Antipolis, France

[2] Picogiga, F-91971 Courtaboeuf 7, France

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 04期

关键词：

D O I：

10.1063/1.1539297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the growth by molecular-beam epitaxy on 2 in. sapphire substrates of crack-free AlxGa1-xN/GaN distributed Bragg reflectors (DBRs) with high-Al composition (x=0.5). This is achieved by introducing a thick AlN interlayer and strain mediating AlyGa1-yN layer between the substrate and DBR. The relatively larger refractive index ratio between Al0.5Ga0.5N and GaN permits one to obtain a quite large spectral stopband width (49 nm) and a high reflectance value (69%) for only eight mirror periods. (C) 2003 American Institute of Physics.

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页码：499 / 501

页数：3

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