Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction

被引：97

作者：

Diagne, M ^{[1
]}

He, Y

Zhou, H

Makarona, E

Nurmikko, AV

Han, J

Waldrip, KE

Figiel, JJ

Takeuchi, T

Krames, M

机构：

[1] Brown Univ, Div Engn, Providence, RI 02912 USA

[2] Brown Univ, Dept Phys, Providence, RI 02912 USA

[3] Sandia Natl Labs, Albuquerque, NM 87111 USA

[4] Agilent Technol Labs, Palo Alto, CA 94304 USA

[5] Lumileds Lighting, San Jose, CA 95131 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 22期

关键词：

D O I：

10.1063/1.1415405

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have designed and implemented a vertical cavity violet light emitting diode which features an optical resonator composed of an in situ grown GaN/AlGaN DBR and a high reflectivity dielectric mirror. The active InGaN MQW medium is grown directly atop the AlGaN DBR and the structure includes an intracavity lateral current spreading layer based on a p(++)/n(++) InGaN/GaN tunnel junction. Electroluminescence shows directional emission, with modal linewidths as narrow as 0.6 nm. (C) 2001 American Institute of Physics.

引用

页码：3720 / 3722

页数：3

共 13 条

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[J]. APPLIED PHYSICS LETTERS, 2000, 77 (12) : 1744 - 1746
[10] A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laser
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[J]. APPLIED PHYSICS LETTERS, 2000, 76 (13) : 1662 - 1664

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