Bulk and surface electronic structure of InAs(110)

被引：13

作者：

Andersson, CBM ^{[1
]}

Andersen, JN

Persson, PES

Karlsson, UO

机构：

[1] Royal Inst Technol, S-10044 Stockholm, Sweden

[2] Univ Lund, Inst Phys, Dept Synchroton Radiat Res, S-22362 Lund, Sweden

[3] SAAB AB, S-58188 Linkoping, Sweden

来源：

SURFACE SCIENCE | 1998年 / 398卷 / 03期

关键词：

angle-resolved photoemission; indium arsenide; surface electronic phenomena;

D O I：

10.1016/S0039-6028(98)80045-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The InAs(110) cleavage surface has been investigated by angle-resolved photoelectron spectroscopy. A separation between the In 4d(5/2) bulk component and the valence band maximum of 16.8 eV is found to be consistent with normal emission spectra. Experimental energy band dispersions, E-i(k), for the four bulk valence bands are established along the Sigma-line of the bulk Brillouin zone. A bulk band structure calculation utilizing the augmented plane-wave method is made. The experimental and calculated E-i(k) dispersions are found to be in good agreement with each other. E-i(k(parallel to)) dispersions for two surface-related structures are established along the lines <(Gamma)over bar>-(M) over bar and (Y) over bar-(M) over bar of the surface Brillouin zone. (C) 1998 Elsevier Science B.V.

引用

页码：395 / +

页数：21

共 37 条

[1] CALCULATED ATOMIC STRUCTURES AND ELECTRONIC-PROPERTIES OF GAP, INP, GAAS, AND INAS (110) SURFACES [J].