SURFACE ELECTRONIC-STRUCTURE OF INAS(110)

被引：17

作者：

ANDERSSON, CBM

ANDERSEN, JN

PERSSON, PES

KARLSSON, UO

机构：

[1] UNIV LUND,DEPT SYNCHROTRON RADIAT RES,S-22362 LUND,SWEDEN

[2] LINKOPING UNIV,NATL SUPERCOMP CTR,S-58183 LINKOPING,SWEDEN

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.47.2427

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure of the InAs(I 10) cleavage surface has been studied by angle-resolved photoelectron spectroscopy. The bulk band structure has been calculated utilizing the augmented plane-wave method and then the bulk bands have been projected along the lines GAMMA-XBARBAR and GAMMA-YBARBAR of the surface Brillouin zone (SBZ). Three surface-related structures have been found and their initial state versus k parallel-to dispersion along the line GAMMA-XBARBAR and the line GAMMA-YBARBAR of the SBZ has been determined. The structures are identified as A5, A4, and A3 along GAMMA-XBARBAR and as A5, A4, and C2 along GAMMA-YBARBAR.

引用

页码：2427 / 2430

页数：4

共 12 条

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