Imprinting Br-atoms at Si(111) from a SAM of CH3Br(ad), with pattern retention

被引：25

作者：

Dobrin, S ^{[1
]}

Lu, XK ^{[1
]}

Naumkin, FY ^{[1
]}

Polanyi, JC ^{[1
]}

Yang, JSY ^{[1
]}

机构：

[1] Univ Toronto, Dept Chem, Toronto, ON M5S 3H6, Canada

来源：

SURFACE SCIENCE | 2004年 / 573卷 / 02期

基金：

加拿大自然科学与工程研究理事会;

关键词：

scanning tunneling microscopy; self-assembly; bromine; surface chemical reaction; photochemistry; silicon; chemisorption; physical adsorption;

D O I：

10.1016/j.susc.2004.09.048

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The formation of molecular-scale patterns at surfaces as a self-assembled monolayer (SAM) demands adsorbate mobility, whereas devices require stability. We describe a method of photo- or electron-imprinting a SAM of CH3Br(ad) as covalently-bound Br-Si(s) at Si(1 1 1)7 x 7, with pattern-retention. This imprinting process, it is proposed, involves charge-transfer to the adsorbate, followed by downward recoil of Br- to give chemical attachment of Br at the reactive Si-atom beneath the parent physisorbed methyl bromide. The electron may subsequently be returned to the substrate along with the excess energy, accounting for the localised Br-imprint. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：L363 / L368

页数：6

共 33 条

[31] Nanolithography and nanochemistry: Probe-related patterning techniques and chemical modification for nanometer-sized devices [J].