Bias Voltage Effect on the Properties of TiN Films by Reactive Magnetron Sputtering

被引:25
作者
Chun, Sung-Yong [1 ]
机构
[1] Mokpo Natl Univ, Dept Adv Mat Sci & Engn, Jeonnam 534729, South Korea
关键词
TiN; Substrate bias voltage; Preferred orientation; Microstructure; Hardness; NITRIDE THIN-FILMS; MECHANICAL-PROPERTIES; TARGET BIAS; COATINGS; DEPOSITION; GROWTH; EVOLUTION; GLASS;
D O I
10.3938/jkps.56.1134
中图分类号
O4 [物理学];
学科分类号
070305 [高分子化学与物理];
摘要
Nanocrystalline TiN films deposited by reactive magnetron sputtering under different bias voltages were investigated. The film textures; crystallite sizes, and microstructure were analyzed by X-ray diffraction and field emission scanning microscopy. The TiN films deposited without bias showed a columnar grain structure with large grains and a mixed (200)-(111) orientation with a strong (200) texture. However, when the applied bias voltage was increased, The TiN films had small grains with a. strong (111) texture. Both the rms roughness and the nanoindentation hardness of the TiN films increased remarkably with increasing negative bias voltage.
引用
收藏
页码:1134 / 1139
页数:6
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