Growth of epitaxial SrBi2Ta2O9 thin films by metalorganic chemical vapor deposition

被引：23

作者：

Ishikawa, K

Saiki, A

Funakubo, H

机构：

[1] Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] Tokyo Inst Technol, Res Cooperat Sect, Meguro Ku, Tokyo 1528550, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 4B期

关键词：

SrBi2Ta2O9; MOCVD; epitaxial; (001) orientation; (116) orientation;

D O I：

10.1143/JJAP.39.2102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxially grown SrBi2Ta2O9(SBT) thin films were deposited on various types of substrates at temperatures ranging from 620 to 910 degrees C by metalorganic chemical vapor deposition. Epitaxial SET films with (001) orientation were easily frown on perovskite- and rocksalt-structured substrates. The films tended to grow at lower deposition temperatures on the substrates, which had a lower mismatch with the film. When the film was deposited on a fluorite-structured substrate, yttria-stabilized zirconia (YSZ), it had a fluorite phase at a wide deposition temperature range. Epitaxially grown SET film with (116) orientation was prepared on (110) SrTiO3 substrate at 820 degrees C. This film exhibited twinning.

引用

页码：2102 / 2109

页数：8

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