Micro-Raman spectroscopy investigation of C3N4 crystals deposited on nickel substrates

被引：27

作者：

Werninghaus, T ^{[1
]}

Zahn, DRT

Wang, EG

Chen, Y

机构：

[1] TU Chemnitz, D-09107 Chemnitz, Germany

[2] Chinese Acad Sci, Beijing 100080, Peoples R China

来源：

基金：

中国国家自然科学基金;

关键词：

C3N4; chemical vapour deposition; Raman spectroscopy;

D O I：

10.1016/S0925-9635(97)00160-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

C3N4, films were deposited on nickel substrates via bias-assisted hot filament chemical vapour deposition. The crystal structure and N:C ratio was determined by X-ray diffraction(( XRD), transmission electron microscopy (TEM). Auger electron spectroscopy (AES). and energy dispersive X-ray; (EDX) analysis to be predominantly alpha- or beta-type depending oil the growth conditions with N:C ratios of 1.30-1.60. For these samples micro-Raman spectroscopy measurements were performed. The spectra shaw several sharp lines in the spectral range from 500 cm(-1) to 1600 cm(-1) and are different for the two crystal modifications. A comparison of the measured frequency positions of Si3N4 using Hooke's law with a factor of 1.43 and with theoretically calculated vibrational densities of state show a very goad agreement between the measured and the theoretical frequency positions. (C) 1998 Elsevier Science S.A.

引用

页码：52 / 56

页数：5

共 27 条

[1] FORMATION OF CARBON NITRIDE FILMS ON SI(100) SUBSTRATES BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ASSISTED VAPOR-DEPOSITION [J].