Double-resonance spectroscopy of InAs/GaAs self-assembled quantum dots

被引：22

作者：

Murdin, BN ^{[1
]}

Hollingworth, AR

Barker, JA

Clarke, DG

Findlay, PC

Pidgeon, CR

Wells, JPR

Bradley, IV

Malik, S

Murray, R

机构：

[1] Univ Surrey, Dept Phys, Guildford GU2 7XH, Surrey, England

[2] Heriot Watt Univ, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland

[3] FOM Inst Rijnhuizen, NL-3430 BE Nieuwegein, Netherlands

[4] Univ London Imperial Coll Sci Technol & Med, Ctr Elect Mat & Devices, London SW7 2BZ, England

来源：

PHYSICAL REVIEW B | 2000年 / 62卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.62.R7755

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present far-/near-infrared double resonance measurements of self-assembled InAs/GaAs quantum dots. The far-infrared resonance is unambiguously associated with a bound-bound intraband transition in the neutral dots. The results show that the interband photoluminescence (PL) lines originate from conduction levels with successively increasing in-plane quantum numbers. We determine the confinement energies for both electrons and holes in the same dots. Furthermore, we show that the inhomogeneous broadening of the PL cannot be attributed solely to size and composition fluctuation.

引用

页码：R7755 / R7758

页数：4

共 26 条

[1] COULOMB ATTRACTION IN THE OPTICAL-SPECTRA OF QUANTUM DISKS [J].

ADOLPH, B ;

GLUTSCH, S ;

BECHSTEDT, F .

PHYSICAL REVIEW B, 1993, 48 (20) :15077-15085

[2] FAR-INFRARED OPTICALLY DETECTED CYCLOTRON-RESONANCE IN GAAS-LAYERS AND LOW-DIMENSIONAL STRUCTURES [J].

AHMED, N ;

AGOOL, IR ;

WRIGHT, MG ;

MITCHELL, K ;

KOOHIAN, A ;

ADAMS, SJA ;

PIDGEON, CR ;

CAVANETT, BC ;

STANLEY, CR ;

KEAN, AH .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (03) :357-363

[3] Mid-infrared photoconductivity in InAs quantum dots [J].

Berryman, KW ;

Lyon, SA ;

Segev, M .

APPLIED PHYSICS LETTERS, 1997, 70 (14) :1861-1863

[4]

Bimberg D., 1999, QUANTUM DOT HETEROST

[5] ELECTRONS IN COUPLED VERTICAL QUANTUM DOTS - INTERDOT TUNNELING AND COULOMB CORRELATION [J].

BRYANT, GW .

PHYSICAL REVIEW B, 1993, 48 (11) :8024-8034

[6] SPECTROSCOPY OF QUANTUM LEVELS IN CHARGE-TUNABLE INGAAS QUANTUM DOTS [J].

DREXLER, H ;

LEONARD, D ;

HANSEN, W ;

KOTTHAUS, JP ;

PETROFF, PM .

PHYSICAL REVIEW LETTERS, 1994, 73 (16) :2252-2255

[7] Shell structure and electron-electron interaction in self-assembled InAs quantum dots [J].

Fricke, M ;

Lorke, A ;

Kotthaus, JP ;

MedeirosRibeiro, G ;

Petroff, PM .

EUROPHYSICS LETTERS, 1996, 36 (03) :197-202

[8] Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots [J].

Fry, PW ;

Itskevich, IE ;

Mowbray, DJ ;

Skolnick, MS ;

Finley, JJ ;

Barker, JA ;

O'Reilly, EP ;

Wilson, LR ;

Larkin, IA ;

Maksym, PA ;

Hopkinson, M ;

Al-Khafaji, M ;

David, JPR ;

Cullis, AG ;

Hill, G ;

Clark, JC .

PHYSICAL REVIEW LETTERS, 2000, 84 (04) :733-736

[9] Theory of random population for quantum dots [J].

Grundmann, M ;

Bimberg, D .

PHYSICAL REVIEW B, 1997, 55 (15) :9740-9745

[10] Energy relaxation by multiphonon processes in InAs/GaAs quantum dots [J].

Heitz, R ;

Veit, M ;

Ledentsov, NN ;

Hoffmann, A ;

Bimberg, D ;

Ustinov, VM ;

Kopev, PS ;

Alferov, ZI .

PHYSICAL REVIEW B, 1997, 56 (16) :10435-10445

← 1 2 3 →