Cluster-doping approach for wide-gap semiconductors:: The case of p-type ZnO -: art. no. 256401

被引：231

作者：

Wang, LG ^{[1
]}

Zunger, A ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.90.256401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

First-principles calculations on p-type doping of the paradigm wide-gap ZnO semiconductor reveal that successful doping depends much on engineering a stable local chemical bonding environment. We suggest a cluster-doping approach in which a locally stable chemical environment is realized by using few dopant species. We explain two puzzling experimental observations, i.e., that monodoping N in ZnO via N-2 fails to produce p-type behavior, whereas using an NO source produces metastable p-type behavior, which disappears over time.

引用

页数：4

共 27 条

[1]

BHARGAVA R, 1997, PROPERTIES WIDE GAP

[2] First-principles calculation of p-type doping of ZnSe using nitrogen -: art. no. 035208 [J].