Ultrathin Al2O3 and AlN films deposited by reactive sputter using advanced electron cyclotron resonance plasma source

Al2O3 and AlN films, with a minimum thickness of 2 nm, were deposited without substrate heating using an advanced electron cyclotron resonance (ECR) plasma source coupled with divided microwaves, and the electrical characteristics of the films were investigated. The uniformity of the film thickness is within +/- 2% on a 6-in wafer. High resistivity of the order of 10(15) Omega cm and the breakdown voltage of 10 MV/cm are obtained for Al2O3 films with thickness from 2 to 40 nm. For AIN films, the resistivity was of the order of 10(14)Omega cm with thickness above 5 nm and the breakdown voltage was about 5 MV/cm. (C) 2000 Elsevier Science Ltd. All rights reserved.