APPLICATION OF ELECTRON-CYCLOTRON-RESONANCE PLASMA SOURCE TO CONDUCTIVE FILM DEPOSITION

被引:28
作者
SHIMADA, M
ONE, T
NISHIMURA, H
MATSUO, S
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1995年 / 13卷 / 03期
关键词
D O I
10.1116/1.579833
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:815 / 819
页数:5
相关论文
共 12 条
[1]  
AKAHORI T, 1989, JPN J APPL PHYS, V30, P3558
[2]  
MASUMOTO H, 1991, APPL PHYS LETT, V55, P498
[3]   LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION METHOD UTILIZING AN ELECTRON-CYCLOTRON RESONANCE PLASMA [J].
MATSUO, S ;
KIUCHI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (04) :L210-L212
[4]   CRYSTAL-STRUCTURES AND OPTICAL-PROPERTIES OF ZNO FILMS PREPARED BY SPUTTERING-TYPE ELECTRON-CYCLOTRON RESONANCE MICROWAVE PLASMA [J].
MATSUOKA, M ;
ONO, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1989, 7 (05) :2975-2982
[5]   A FEW TECHNIQUES FOR PREPARING CONDUCTIVE MATERIAL FILMS FOR SPUTTERING-TYPE ELECTRON-CYCLOTRON RESONANCE MICROWAVE PLASMA [J].
MATSUOKA, M ;
ONO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (03) :L503-L506
[6]   PROCESSING UNIFORMITY IMPROVEMENT BY MAGNETIC-FIELD DISTRIBUTION CONTROL IN ELECTRON-CYCLOTRON RESONANCE PLASMA CHAMBER [J].
NISHIMURA, H ;
KIUCHI, M ;
MATSUO, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (1B) :322-326
[7]  
Oda M., 1990, Microelectronic Engineering, V11, P241, DOI 10.1016/0167-9317(90)90106-4
[8]   ELECTRON-CYCLOTRON-RESONANCE PLASMA SOURCE FOR CONDUCTIVE FILM DEPOSITION [J].
ONO, T ;
NISHIMURA, H ;
SHIMADA, M ;
MATSUO, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1994, 12 (04) :1281-1286
[9]  
ONO T, 1986, J VAC SCI TECHNOL B, V4, P696, DOI 10.1116/1.583599
[10]   ELECTRON-CYCLOTRON RESONANCE PLASMA DEPOSITION TECHNIQUE USING RAW-MATERIAL SUPPLY BY SPUTTERING [J].
ONO, T ;
TAKAHASHI, C ;
MATSUO, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L534-L536