A FEW TECHNIQUES FOR PREPARING CONDUCTIVE MATERIAL FILMS FOR SPUTTERING-TYPE ELECTRON-CYCLOTRON RESONANCE MICROWAVE PLASMA

被引：21

作者：

MATSUOKA, M

ONO, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 03期

关键词：

D O I：

10.1143/JJAP.28.L503

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L503 / L506

页数：4

共 10 条

[1]

Bers A., 1963, WAVES ANISOTROPIC PL

[2] LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION METHOD UTILIZING AN ELECTRON-CYCLOTRON RESONANCE PLASMA [J].

MATSUO, S ;

KIUCHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (04) :L210-L212

[3] DENSE-PLASMA PRODUCTION FOR HIGH-RATE SPUTTERING BY MEANS OF AN ELECTRIC MIRROR [J].

MATSUOKA, M ;

ONO, K .

APPLIED PHYSICS LETTERS, 1988, 53 (21) :2025-2027

[4] PHOTOCHROMISM AND ANOMALOUS CRYSTALLITE ORIENTATION OF ZNO FILMS PREPARED BY A SPUTTERING-TYPE ELECTRON-CYCLOTRON RESONANCE MICROWAVE PLASMA [J].

MATSUOKA, M ;

ONO, K .

APPLIED PHYSICS LETTERS, 1988, 53 (15) :1393-1395

[5] ION ENERGY ANALYSIS FOR SPUTTERING-TYPE ELECTRON-CYCLOTRON-RESONANCE MICROWAVE PLASMA [J].

MATSUOKA, M ;

ONO, K .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (10) :5179-5182

[6]

Ono T., 1985, 1985 Symposium on VLSI Technology. Digest of Technical Papers, P84

[7] ELECTRON-CYCLOTRON RESONANCE PLASMA DEPOSITION TECHNIQUE USING RAW-MATERIAL SUPPLY BY SPUTTERING [J].

ONO, T ;

TAKAHASHI, C ;

MATSUO, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L534-L536

[8] MICROWAVE PLASMA ETCHING [J].

SUZUKI, K ;

OKUDAIRA, S ;

SAKUDO, N ;

KANOMATA, I .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (11) :1979-1984

[9] AN ELECTRON-CYCLOTRON RESONANCE PLASMA DEPOSITION TECHNIQUE EMPLOYING MAGNETRON MODE SPUTTERING [J].

TAKAHASHI, C ;

KIUCHI, M ;

ONO, T ;

MATSUO, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1988, 6 (04) :2348-2352

[10]

TUCHIMOTO T, 1978, J VAC SCI TECHNOL, V15, P70

← 1 →