ELECTRON-CYCLOTRON RESONANCE PLASMA DEPOSITION TECHNIQUE USING RAW-MATERIAL SUPPLY BY SPUTTERING

被引：109

作者：

ONO, T

TAKAHASHI, C

MATSUO, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 08期

关键词：

D O I：

10.1143/JJAP.23.L534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L534 / L536

页数：3

共 6 条

[1] ELECTRIC-FIELDS PARALLEL TO MAGNETIC-FIELD IN A LABORATORY PLASMA IN A MAGNETIC-MIRROR FIELD
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JACQUOT, C
[J]. JOURNAL OF PLASMA PHYSICS, 1974, 12 (03) : 467 - 486
[2] KIMURA S, 1983, 15TH C SOL STAT DEV, P241
[3] LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION METHOD UTILIZING AN ELECTRON-CYCLOTRON RESONANCE PLASMA
MATSUO, S
KIUCHI, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (04): : L210 - L212
[4] McGuire G.E., 1973, INORG CHEM, V12, P2451
[5] CONTROL OF FILM PROPERTIES BY RF-SPUTTERING TECHNIQUES
VOSSEN, JL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (05): : S12 - +
[6] CORRELATION OF SPUTTERING CONDITIONS WITH ELECTRONIC CONDUCTION IN TA2O5 FILMS
YOUNG, PL
FEHLNER, FP
WHITMAN, AJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 174 - 176