Ferroelectric properties of Pb1-3y/2Lay(Zr0.4Ti0.6)O3 structures with La concentration gradients

被引:36
作者
Boerasu, I
Pintilie, L
Kosec, M
机构
[1] Natl Inst Mat Phys, Bucharest 76900, Romania
[2] Josef Stefan Inst, Ljubljana 1000, Slovenia
关键词
D O I
10.1063/1.1313814
中图分类号
O59 [应用物理学];
学科分类号
摘要
Graded ferroelectric (GF) structures were obtained by successive deposition of Pb1-3y/2Lay(Zr0.4Ti0.6)O-3 films with different La contents on Pt/TiO2Si substrates. The method used for deposition was sol gel. The final structure consists of four layers, starting from the Pt electrode to the top gold electrode: (1) no La; (2) 4% La; (3) 8% La; and (4) 12% La. Ferroelectric properties of the GF structure were investigated, and an anomalous shift of the hysteresis loop along the polarization axis was found. The sense of this shift depends on the initial direction of the ferroelectric polarization. The presence of hysteresis displacement "up" or "down" can be explained if the presence of a built-in charge in the GF structure is admitted. The built-in potential produced by this charge is computed using a simple theoretical model. (C) 2000 American Institute of Physics. [S0003-6951(00)01040-8].
引用
收藏
页码:2231 / 2233
页数:3
相关论文
共 14 条
[1]   PREPARATION OF C-AXIS ORIENTED PBTIO3 THIN-FILMS AND THEIR CRYSTALLOGRAPHIC, DIELECTRIC, AND PYROELECTRIC PROPERTIES [J].
IIJIMA, K ;
TOMITA, Y ;
TAKAYAMA, R ;
UEDA, I .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) :361-367
[2]  
Kanno I, 1996, APPL PHYS LETT, V68, P328, DOI 10.1063/1.116705
[3]   Memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for metal ferroelectric insulator semiconductor field effect transistor [J].
Kim, YT ;
Shin, DS .
APPLIED PHYSICS LETTERS, 1997, 71 (24) :3507-3509
[4]   TRANSIENT-BEHAVIOR AND MEMORY EFFECT OF A PBZRXTI1-XO3/YBA2CU3O7-X 3-TERMINAL DEVICE [J].
LIN, H ;
WU, NJ ;
XIE, K ;
LI, XY ;
IGNATIEV, A .
APPLIED PHYSICS LETTERS, 1994, 65 (08) :953-955
[5]   PYROELECTRIC PROPERTIES OF LANTHANUM-DOPED FERROELECTRIC PLZT CERAMICS [J].
LIU, ST ;
TUFTE, ON ;
HEAPS, JD .
FERROELECTRICS, 1972, 3 (2-3-) :281-&
[6]   Capacitance transient spectroscopy in metal-insulator-metal systems and its application to the determination of trap parameters in polyimide films [J].
Liufu, D ;
Kao, KC .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (02) :1089-1094
[7]   FERROELECTRIC THIN-FILMS WITH POLARIZATION GRADIENTS NORMAL TO THE GROWTH SURFACE [J].
MANTESE, JV ;
SCHUBRING, NW ;
MICHELI, AL ;
CATALAN, AB .
APPLIED PHYSICS LETTERS, 1995, 67 (05) :721-723
[8]   Slater model applied to polarization graded ferroelectrics [J].
Mantese, JV ;
Schubring, NW ;
Micheli, AL ;
Catalan, AB ;
Mohammed, MS ;
Naik, R ;
Auner, GW .
APPLIED PHYSICS LETTERS, 1997, 71 (14) :2047-2049
[9]  
OKUYAMA M, 1980, JPN J APPL PHYS PT 1, V20, P315
[10]   Indirect enhancement of PbS photoconductivity by ferroelectric field effect in a PbS/PbTiO3/Si heterostructure [J].
Pintilie, I ;
Pintilie, L ;
Dragoi, V ;
Petre, D ;
Botila, T .
APPLIED PHYSICS LETTERS, 1997, 71 (08) :1104-1106