Slater model applied to polarization graded ferroelectrics

被引:126
作者
Mantese, JV [1 ]
Schubring, NW [1 ]
Micheli, AL [1 ]
Catalan, AB [1 ]
Mohammed, MS [1 ]
Naik, R [1 ]
Auner, GW [1 ]
机构
[1] WAYNE STATE UNIV,DETROIT,MI 48202
关键词
D O I
10.1063/1.119783
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ferroelectric thin films of BaxSr1-xTiO3 with compositional gradients normal to the growth surface have been formed by the successive deposition and annealing of films having step-variable Ba to Sr ratios. By suitably tailoring the magnitude and sense of the gradient in Ba to Sr ratio, directional potentials can be built into the structures yielding a new, but controllable, hysteresis phenomenon. Slater's empirical model for ferroelectric materials has been extended to also describe thin films with polarization gradients normal to the growth surface, i.e., graded ferroelectric devices. This model accounts for several aspects of these structures, including: the broadness of the permittivity plots with temperature, the formation of a spontaneous potential upon oscillatory field excitation, offsets in the hysteresis graphs along the displacement axis with directions which are gradient dependent, and the electric field dependence of that offset. (C) 1997 American Institute of Physics.
引用
收藏
页码:2047 / 2049
页数:3
相关论文
共 24 条
[1]   A PHENOMENOLOGICAL THEORY FOR PHASE-TRANSITIONS IN PEROVSKITE FERROELECTRICS WITH OXYGEN OCTAHEDRON TILTS [J].
HALEMANE, TR ;
HAUN, MJ ;
CROSS, LE ;
NEWNHAM, RE .
FERROELECTRICS, 1985, 62 (3-4) :149-165
[2]   Dielectric properties of Ba1-xSrxTiO3 ceramics [J].
Hilton, AD ;
Ricketts, BW .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1996, 29 (05) :1321-1325
[3]  
Isupov V. A., 1996, Physics of the Solid State, V38, P734
[4]  
Jona F., 1962, FERROELECTRIC CRYSTA, P216
[5]   THEORY OF ELECTROOPTIC EFFECT IN BATIO3 [J].
KINASE, W ;
MORI, K .
FERROELECTRICS, 1980, 29 (3-4) :235-241
[6]   DOMAIN FORMATION AND STRAIN RELAXATION IN EPITAXIAL FERROELECTRIC HETEROSTRUCTURES [J].
KWAK, BS ;
ERBIL, A ;
BUDAI, JD ;
CHISHOLM, MF ;
BOATNER, LA ;
WILKENS, BJ .
PHYSICAL REVIEW B, 1994, 49 (21) :14865-14879
[7]   STRAIN RELAXATION BY DOMAIN FORMATION IN EPITAXIAL FERROELECTRIC THIN-FILMS [J].
KWAK, BS ;
ERBIL, A ;
WILKENS, BJ ;
BUDAI, JD ;
CHISHOLM, MF ;
BOATNER, LA .
PHYSICAL REVIEW LETTERS, 1992, 68 (25) :3733-3736
[8]   MACROSCOPIC BEHAVIOR OF THE DIFFUSE PHASE-TRANSITIONS IN FERROELECTRIC RELAXORS [J].
LOBO, RPSM ;
MOREIRA, RL ;
MOHALLEM, NDS .
FERROELECTRICS, 1992, 133 (1-4) :169-174
[9]   FERROELECTRIC THIN-FILMS WITH POLARIZATION GRADIENTS NORMAL TO THE GROWTH SURFACE [J].
MANTESE, JV ;
SCHUBRING, NW ;
MICHELI, AL ;
CATALAN, AB .
APPLIED PHYSICS LETTERS, 1995, 67 (05) :721-723
[10]  
MANTESE JV, 1989, MRS B OCT, P48