Slater model applied to polarization graded ferroelectrics

被引:126
作者
Mantese, JV [1 ]
Schubring, NW [1 ]
Micheli, AL [1 ]
Catalan, AB [1 ]
Mohammed, MS [1 ]
Naik, R [1 ]
Auner, GW [1 ]
机构
[1] WAYNE STATE UNIV,DETROIT,MI 48202
关键词
D O I
10.1063/1.119783
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ferroelectric thin films of BaxSr1-xTiO3 with compositional gradients normal to the growth surface have been formed by the successive deposition and annealing of films having step-variable Ba to Sr ratios. By suitably tailoring the magnitude and sense of the gradient in Ba to Sr ratio, directional potentials can be built into the structures yielding a new, but controllable, hysteresis phenomenon. Slater's empirical model for ferroelectric materials has been extended to also describe thin films with polarization gradients normal to the growth surface, i.e., graded ferroelectric devices. This model accounts for several aspects of these structures, including: the broadness of the permittivity plots with temperature, the formation of a spontaneous potential upon oscillatory field excitation, offsets in the hysteresis graphs along the displacement axis with directions which are gradient dependent, and the electric field dependence of that offset. (C) 1997 American Institute of Physics.
引用
收藏
页码:2047 / 2049
页数:3
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