Stochastic simulation studies of molecular resists

被引：24

作者：

Drygiannakis, D.

Patsis, G. P. ^{[1
]}

Raptis, I.

Niakoula, D.

Vidali, V.

Couladouros, E.

Argitis, P.

Gogolides, E.

机构：

[1] NCSR Demokritos, IMEL, GR-15310 Athens, Greece

[2] NCSR Demokritos, IPC, GR-15310 Athens, Greece

来源：

MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 5-8期

关键词：

molecular resists; high resolution lithography; LER;

D O I：

10.1016/j.mee.2007.01.044

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of resist molecular weight as well as its architecture becomes important in lithographic scales aiming at sub-45 nm resolution. The effects of processing and resist molecular geometry on line-edge roughness (LER) should be well understood in order to meet the ITRS lithographic specifications. In this work, two-dimensional simulations and comparisons of the LER between films of molecular resists and resist films made of oligomers with the same molecular diameter, showed that in all cases molecular resists have lower LER. Explanations of this behavior are proposed based on molecular architecture and the free volume distribution in the resist film. It was also found that the size of free volume regions is less in molecular resist than in the corresponding oligomers. (c) 2007 Elsevier B.V. All rights reserved.

引用

收藏

页码：1062 / 1065

页数：4

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