Yield and matching implications for static RAM memory array sense-amplifier design

被引：45

作者：

Lovett, SJ ^{[1
]}

Gibbs, GA ^{[1
]}

Pancholy, A ^{[1
]}

机构：

[1] Cypress Semicond Inc, San Jose, CA 95134 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2000年 / 35卷 / 08期

关键词：

matching; sense amplifier; SRAM; yield;

D O I：

10.1109/4.859510

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of MOS transistor mismatch upon sense-amplifier yield in synchronous static RAM memories is investigated. The matching characteristics of two transistor layout styles are compared. A general formula is derived for calculating the statistical likelihood of the sense amplifier failing to read correct data given transistor size and input differential voltage. Recommendations are made for optimizing size/speed/reliability trade-offs.

引用

页码：1200 / 1204

页数：5

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