Ultrahigh Responsivity Visible and Infrared Detection Using Silicon Nanowire Phototransistors

被引：141

作者：

Zhang, Arthur ^{[1
]}

Kim, Hongkwon ^{[1
]}

Cheng, James ^{[1
]}

Lo, Yu-Hwa ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, Jacobs Sch Engn, La Jolla, CA 92093 USA

来源：

NANO LETTERS | 2010年 / 10卷 / 06期

基金：

美国国家科学基金会;

关键词：

Silicon; nanowire; photodetector; visible; infrared; N-TYPE; PHOTOCURRENT;

D O I：

10.1021/nl1006432

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Nanowire photodetectors can perform exceptionally well due to their unique properties arising from the nanowire geometry. Here we report on the phenomenal responsivity and extended spectral range of scalable, vertically etched, silicon nanowire photodetector arrays defined by nanoimprint lithography. The high internal gain in these devices allows for detection at below room temperatures of subfemtowatt per micrometer visible illumination and picowatt infrared illumination resulting from band to surface state generation.

引用

页码：2117 / 2120

页数：4

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