Improved quality GaN by growth on compliant silicon-on-insulator substrates using metalorganic chemical vapor deposition

The use of compliant silicon-on-insulator (SOI) substrates instead of Si substrates is shown to improve the quality of epitaxial GaN layers by releasing the strain and absorbing the generated threading dislocations in the thin Si overlay of the SOI substrate. GaN layers have been grown on SOI substrates by low-pressure metalorganic chemical vapor deposition and various growth conditions and compared with GaN layers grown on Si substrates. Crystal uniformity, surface morphology, and number of threading dislocations of GaN layers grown on SOI substrates are improved compared to layers grown directly on Si substrates as evidenced by x-ray diffraction spectroscopy (XRD) and transmission electron microscopy. Full width at half maximum XRD values improved from 672 to 378 arcsec by growth on SOI instead of Si substrates. The GaN layers grown directly on Si substrates are highly resistive while all as-grown GaN layers on SOI substrates are unintentionally n type. For a 1-2 mu m thick GaN layer grown on SOI, the electron mobility is typically in the order of 10(2) cm(2)/V a with a background carrier concentration in the range of 1.5-5.0 X 10(17) cm(-3). (C) 1998 American Institute of Physics. [S0021-8979(98)05607-2].