OVERCOMING THE PSEUDOMORPHIC CRITICAL THICKNESS LIMIT USING COMPLIANT SUBSTRATES

被引:42
作者
CHUA, CL
HSU, WY
LIN, CH
CHRISTENSON, G
LO, YH
机构
[1] School of Electrical Engineering, Cornell University, Ithaca
关键词
D O I
10.1063/1.111229
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrated the high-quality molecular beam epitaxy growth of exceedingly thick In0.14Ga0.86As pseudomorphic layers on thin, free-standing, compliant GaAs substrates. We first fabricated 800-angstrom-thick compliant platforms before growing a lattice-mismatched layer on the platform. The layer we grew exceeds its usual critical thickness by about twenty times without strain relaxation. X-ray analysis confirms a shift in the InGaAs peaks grown on the compliant substrate, indicating an unrelaxed strain of 0.9%. Moreover, atomic force microscope profiles verify that layers grown on compliant substrates are much smoother than layers grown on a plain substrate.
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页码:3640 / 3642
页数:3
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