HIGH-CURRENT LATTICE-STRAINED IN0.59GA0.41AS/IN0.52AL0.48AS MODULATION-DOPED FIELD-EFFECT TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY

被引:6
作者
KUANG, JB [1 ]
CHEN, YK [1 ]
SIVCO, D [1 ]
CHO, AY [1 ]
EASTMAN, LF [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.104041
中图分类号
O59 [应用物理学];
学科分类号
摘要
High-current driving capability is realized in submicron-gate lattice-strained In0.59Ga0.41As/In0.52Al 0.48As (Δa/a=4×10-3) modulation-doped field-effect transistors. Full-channel drain current in excess of 1.10 and 1.90 A/mm are obtained at 80 K for the singly doped and doubly doped structure, respectively. By using the double modulation technique and a buried p-buffer layer, excellent high-frequency performance and flat transconductance characteristics were realized over a very broad range of gate and drain bias voltages. These devices are very suitable for large-signal or power device operations. The high quality In0.52Al0.48As buffer layer eliminates the hysteresis and current instability (or the kink effect) in submicron-gate devices at both 300 and 80 K.
引用
收藏
页码:1784 / 1786
页数:3
相关论文
共 10 条
  • [1] FATHIMULLA A, 1988, 15TJH P INT S GAAS R, P455
  • [2] GRIEM HT, 1988, JUN EL MAT C BOULD
  • [3] Ho P., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P184, DOI 10.1109/IEDM.1988.32785
  • [4] LOW-FIELD AND HIGH-FIELD TRANSPORT-PROPERTIES OF PSEUDOMORPHIC INXGA1-XAS IN0.52AL0.48AS (0.53-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.65) MODULATION-DOPED HETEROSTRUCTURES
    HONG, WP
    NG, GI
    BHATTACHARYA, PK
    PAVLIDIS, D
    WILLING, S
    DAS, B
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) : 1945 - 1949
  • [5] Jaffe M. D., 1987, Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (Cat. No.87CH2526-2), P70
  • [6] GA0.4IN0.6AS/AL0.55IN0.45AS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS
    KUO, JM
    CHANG, TY
    [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (09) : 380 - 382
  • [7] Mishra U. K., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P180, DOI 10.1109/IEDM.1988.32784
  • [8] HIGH-PERFORMANCE SUBMICROMETER ALINAS-GAINAS HEMTS
    MISHRA, UK
    BROWN, AS
    JELLOIAN, LM
    HACKETT, LH
    DELANEY, MJ
    [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) : 41 - 43
  • [9] IMPROVED STRAINED HEMT CHARACTERISTICS USING DOUBLE-HETEROJUNCTION IN0.65GA0.35AS/IN0.52AL0.48AS DESIGN
    NG, GI
    PAVLIDIS, D
    TUTT, M
    OH, JE
    BHATTACHARYA, PK
    [J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (03) : 114 - 116
  • [10] A 0.1-MU-M GATE AL0.5IN0.5AS GA0.5IN0.5AS MODFET FABRICATED ON GAAS SUBSTRATES
    WANG, GW
    CHEN, YK
    SCHAFF, WJ
    EASTMAN, LF
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) : 818 - 823