IMPROVED STRAINED HEMT CHARACTERISTICS USING DOUBLE-HETEROJUNCTION IN0.65GA0.35AS/IN0.52AL0.48AS DESIGN

被引：12

作者：

NG, GI

PAVLIDIS, D

TUTT, M

OH, JE

BHATTACHARYA, PK

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 03期

关键词：

D O I：

10.1109/55.31686

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：114 / 116

页数：3

共 11 条

[1]

Cazaux J.-L., 1988, 18 EUR MICR C STOCKH, P1005

[2] AN ANALYTICAL APPROACH TO THE CAPACITANCE - VOLTAGE CHARACTERISTICS OF DOUBLE-HETEROJUNCTION HEMTS [J].

CAZAUX, JL ;

NG, GI ;

PAVLIDIS, D ;

CHAU, HF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (08) :1223-1232

[3] LOW-FIELD AND HIGH-FIELD TRANSPORT-PROPERTIES OF PSEUDOMORPHIC INXGA1-XAS IN0.52AL0.48AS (0.53-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.65) MODULATION-DOPED HETEROSTRUCTURES [J].

HONG, WP ;

NG, GI ;

BHATTACHARYA, PK ;

PAVLIDIS, D ;

WILLING, S ;

DAS, B .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) :1945-1949

[4]

Inoue K., 1987, IEDM, P422

[5]

Jaffe M. D., 1987, Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (Cat. No.87CH2526-2), P70

[6]

Kuo J. M., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P460

[7]

MISHRA UK, 1988, 46TH ANN DEV RES C B

[8] CHARACTERISTICS OF STRAINED IN0.65GA0.35AS/IN0.52AL0.48AS HEMT WITH OPTIMIZED TRANSPORT PARAMETERS [J].

NG, GI ;

HONG, WP ;

PAVLIDIS, D ;

TUTT, M ;

BHATTACHARYA, PK .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) :439-441

[9]

NG GI, 1988, 15TH INT GAAS REL CO

[10] HIGH-EFFICIENCY MILLIMETER-WAVE GAAS/GAALAS POWER HEMTS [J].

SAUNIER, P ;

LEE, JW .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) :503-505

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