GA0.4IN0.6AS/AL0.55IN0.45AS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS

被引：22

作者：

KUO, JM ^{[1
]}

CHANG, TY ^{[1
]}

机构：

[1] RUTGERS STATE UNIV,DEPT ELECT ENGN,PISCATAWAY,NJ 08854

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 09期

关键词：

D O I：

10.1109/EDL.1987.26667

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：380 / 382

页数：3

共 17 条

[1] Berenz J. J., 1987, Topical Meeting on Picosecond Electronics and Optoelectronics. Technical Digest. Conference Edition, P37
[2] ELECTRON-TRANSPORT IN DIRECT-GAP-III-V TERNARY ALLOYS
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SUTRADHAR, SK
NAG, BR
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (06): : 891 - 908
[3] SCHOTTKY-BARRIER HEIGHT OF IN0.43AL0.57AS
CHU, P
LIN, CL
WIEDER, HH
[J]. ELECTRONICS LETTERS, 1986, 22 (17) : 890 - 892
[4] PHOTOCONDUCTIVITY EFFECTS IN EXTREMELY HIGH MOBILITY MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES
DRUMMOND, TJ
KOPP, W
FISCHER, R
MORKOC, H
THORNE, RE
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1238 - 1240
[5] MODULATION-DOPED GAAS/(AL,GA)AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS - MODFETS
DRUMMOND, TJ
MASSELINK, WT
MORKOC, H
[J]. PROCEEDINGS OF THE IEEE, 1986, 74 (06) : 773 - 822
[6] FISHER R, 1984, IEEE T ELECTRON DEV, V31, P1028
[7] HIROSE K, 1985, I PHYS C SER, V79, P529
[8] HIGH TRANSCONDUCTANCE INGAAS/ALGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS
KETTERSON, A
MOLONEY, M
MASSELINK, WT
PENG, CK
KLEM, J
FISCHER, R
KOPP, W
MORKOC, H
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 628 - 630
[9] CHARACTERIZATION OF INGAAS/ALGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS
KETTERSON, AA
MASSELINK, WT
GEDYMIN, JS
KLEM, J
PENG, CK
KOPP, WF
MORKOC, H
GLEASON, KR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 564 - 571
[10] VELOCITY-FIELD CHARACTERISTICS OF III-V SEMICONDUCTOR ALLOYS - BAND-STRUCTURE INFLUENCES
KRISHNAMURTHY, S
SHER, A
CHEN, AB
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) : 1475 - 1479

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