Anisotropy of the magnetoresistance in Gd5Si2Ge2 -: art. no. 237203

被引：35

作者：

Tang, H

Pecharsky, VK ^{[1
]}

Samolyuk, GD

Zou, M

Gschneidner, KA

Antropov, VP

Schlagel, DL

Lograsso, TA

机构：

[1] Iowa State Univ, Ames Lab, Mat & Engn Phys Program, Ames, IA 50011 USA

[2] Iowa State Univ, Dept Mat Sci & Engn, Ames, IA 50011 USA

[3] Iowa State Univ, Ames Lab, Condensed Matter Phys Program, Ames, IA 50011 USA

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 93卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.93.237203

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The observed magnetoresistance of single crystalline Gd5Si2Ge2 is negative and strongly anisotropic. The absolute values measured along the [100] and [010] directions exceed those parallel to the [001] direction by more than 60%. First principles calculations demonstrate that a structural modification is responsible for the anisotropy of the magnetoresistance, and that the latter is due to a significant reduction of electronic velocity in the [100] direction and the anisotropy of electrical conductivity.

引用

页码：237203 / 1

页数：4

共 23 条

[21] Interplay between reversible and irreversible magnetic phase transitions in polycrystalline Gd5Ge4 -: art. no. 064410 [J].