A "smarter-cut" approach to low temperature silicon layer transfer

被引:106
作者
Tong, QY
Scholz, R
Gosele, U
Lee, TH
Huang, LJ
Chao, YL
Tan, TY
机构
[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
[2] Duke Univ, Sch Engn, Wafer Bonding Lab, Durham, NC 27708 USA
关键词
D O I
10.1063/1.120601
中图分类号
O59 [应用物理学];
学科分类号
摘要
Silicon wafers were first implanted at room temperature by B+ with 5.0 x 10(12) to 5.0 x 10(15) ions/cm(2) at 180 keV, and subsequently implanted by H-2(+) with 5.0 x 10(16) ions/cm(2) at an energy which locates the H-peak concentration in the silicon wafers at the same position as that of the implanted boron peak. Compared to the H-only implanted samples, the temperature for a B+H coimplanted silicon layer to split from its substrate after wafer bonding during a heat treatment for a given time is reduced significantly. Further reduction of the splitting temperature is accomplished by appropriate prebonding annealing of the B+H coimplanted wafers. Combination of these two effects allows the transfer of a silicon layer from a silicon wafer onto a severely thermally mismatched substrate such as quartz at a temperature as low as 200 degrees C. (C) 1998 American Institute of Physics.
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页码:49 / 51
页数:3
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