共 10 条
[3]
Bruel M., 1994, U.S. patent, Patent No. 5374564
[4]
BUREL M, 1997, JPN J APPL PHYS PT 1, V36, P1636
[6]
MECHANISM FOR HYDROGEN COMPENSATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON
[J].
PHYSICAL REVIEW B,
1985, 31 (08)
:5525-5528
[7]
Tong Q.-Y., 1997, U.S. Patent application, Patent No. [08/866, 951, 08866951]
[10]
On the mechanism of the hydrogen-induced exfoliation of silicon
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1997, 15 (04)
:1065-1073