Transient numerical investigation of induction heating during sublimation growth of silicon carbide single crystals

This article presents transient numerical simulations of the temperature evolution during sublimation growth of SiC single crystals via physical vapor transport (also called the modified Lely method) including diffusion and radiation, investigating the influence of induction heating. Using the imposed voltage as input data, the heat sources are computed via an axisymmetric complex-valued magnetic scalar potential that is determined as the solution of an elliptic PDE. The presented results include stationary simulations of magnetic potential distributions and resulting heat sources as well as transient simulations of the temperature evolution during the heating process. We examine the effects of imposed voltage (i.e. heating power), of different coil positions. and of a moving induction coil on the evolution of the global temperature field and on the temperature at the source, at the seed, and at the blind holes. All material data used are either included or referenced. (C) 2002 Elsevier Science B.V. All rights reserved.