Fully quantum mechanical simulations of gated silicon quantum wire structures: Investigating the effects of changing wire cross-section on transport

被引：6

作者：

Akis, Richard ^{[1
]}

Gilbert, Matthew

Ferry, David K.

机构：

[1] Arizona State Univ, Ctr Solid State Elect Res, Dept Elect Engn, Tempe, AZ 85287 USA

[2] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

SEVENTH INTERNATIONAL CONFERENCE ON NEW PHENOMENA IN MESOSCOPIC STRUCTURES AND FIFTH INTERNATIONAL CONFERENCE ON SURFACES AND INTERFACES OF MESOSCOPIC DEVICES, 2005 | 2006年 / 38卷

关键词：

D O I：

10.1088/1742-6596/38/1/022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present transport simulations of three-dimensional (313) silicon quantum wires in which electron-phonon scattering is incorporated via local modifications to the potential encountered by the electron waves. Computing resistance as a function of wire length, we find that the effects of dissipation essentially take hold immediately, and are apparent right from the point at which the wire is long enough to act as a true waveguide.

引用

页码：87 / 90

页数：4

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