Surface texturing for silicon solar cells using reactive ion etching technique

被引:59
作者
Kumaravelu, G [1 ]
Alkaisi, MM [1 ]
Bittar, A [1 ]
机构
[1] Univ Canterbury, Dept Elect & Comp Engn, Christchurch 1, New Zealand
来源
CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年
关键词
D O I
10.1109/PVSC.2002.1190507
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Surface texturing is an effective and more lasting technique in reducing reflections and improving light trapping compared to antireflection coatings. A-surface texturing technique using Reactive Ion Etching (RIE) method suitable for crystalline and multi crystalline solar cells, which resulted in surfaces with negligible reflection in the visible band is described. Different texturing structures (pillars, holes. and black silicon) have been, studied and compared in the wavelength range from 250nm-2500nm. It is found that the reflectance of the textured column structures were less than 0.4% at wavelengths from 500nm to 1000nm and showed a minimum of 0.29% at 1000 nm while the reflectivity from black silicon is around 1% and hole structures is around 6.8% in the same wavelength range.
引用
收藏
页码:258 / 261
页数:4
相关论文
共 9 条
[1]   Use of porous silicon antireflection coating in multicrystalline silicon solar cell processing [J].
Bilyalov, RR ;
Stalmans, L ;
Schirone, L ;
Lévy-Clément, C .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (10) :2035-2040
[2]  
FATH P, 1994, IEEE PHOT SPEC CONF, P1347, DOI 10.1109/WCPEC.1994.520196
[3]  
GREEN MA, 1982, OPERATING PRINCIPLES, V1
[4]   THE BLACK SILICON METHOD - A UNIVERSAL METHOD FOR DETERMINING THE PARAMETER SETTING OF A FLUORINE-BASED REACTIVE ION ETCHER IN DEEP SILICON TRENCH ETCHING WITH PROFILE CONTROL [J].
JANSEN, H ;
DEBOER, M ;
LEGTENBERG, R ;
ELWENSPOEK, M .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1995, 5 (02) :115-120
[5]  
Narayanan S., 1989, THESIS U NEW S WALES
[6]   Plasma surface texturization for multicrystalline silicon solar cells [J].
Schnell, M ;
Lüdemann, R ;
Schaefer, S .
CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000, 2000, :367-370
[7]   Sub-micron channeling contrast microscopy on reactive ion etched deep Si microstructures [J].
Teo, EJ ;
Alkaisi, M ;
Bettiol, AA ;
Osipowicz, T ;
Van Kan, J ;
Watt, F ;
Markwitz, A .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 190 :339-344
[8]   Low temperature reactive ion etching of silicon with SF6/O-2 plasmas [J].
Wells, T ;
ElGomati, MM ;
Wood, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (02) :434-438
[9]   Intense short-wavelength photoluminescence from thermal SiO2 films co-implanted with Si and C ions [J].
Zhao, J ;
Mao, DS ;
Lin, ZX ;
Jiang, BY ;
Yu, YH ;
Liu, XH ;
Wang, HZ ;
Yang, GQ .
APPLIED PHYSICS LETTERS, 1998, 73 (13) :1838-1840