Intense short-wavelength photoluminescence from thermal SiO2 films co-implanted with Si and C ions

被引：543

作者：

Zhao, J ^{[1
]}

Mao, DS

Lin, ZX

Jiang, BY

Yu, YH

Liu, XH

Wang, HZ

Yang, GQ

机构：

[1] Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China

[2] Zhongshan Univ, State Key Lab Superfast Spect, Guangzhou 510000, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Met, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 13期

关键词：

D O I：

10.1063/1.122299

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Intense short-wavelength photoluminescence (PL) observed at room temperature from thermal SiO2 films co-implanted with Si and C is reported. A flat Si profile was first implanted, followed by 1100 degrees C annealing for 60 min. C ions were subsequently used to be implanted into the same depth region. PL was observed from the as-implanted samples with and without annealing. The PL intensity increases with annealing temperature. Comparing the PL spectra and the PL dynamics of the C-implanted, annealed, Si-implanted (CIASI) SiO2 films with those from Si- and C-implanted SiO2 films suggests that the interaction of Si and C in SiO2 films plays an important role in the luminescence in CIASI SiO2 films. (C) 1998 American Institute of Physics. [S0003-6951(98)00439-2].

引用

页码：1838 / 1840

页数：3

共 19 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[2] Visible luminescences from thermally grown silicon dioxide thin films [J].

Choi, WC ;

Lee, MS ;

Kim, EK ;

Kim, CK ;

Min, SK ;

Park, CY ;

Lee, JY .

APPLIED PHYSICS LETTERS, 1996, 69 (22) :3402-3404

[3] LUMINESCENCE OF DONAR-ACCEPTOR PAIRS IN CUBIC SIC [J].

CHOYKE, WJ ;

PATRICK, L .

PHYSICAL REVIEW B, 1970, 2 (12) :4959-&

[4] Visible photoluminescence from Ge nanocrystal embedded into a SiO2 matrix fabricated by atmospheric pressure chemical vapor deposition [J].

Dutta, AK .

APPLIED PHYSICS LETTERS, 1996, 68 (09) :1189-1191

[5] PHOTOLUMINESCENCE SPECTRA OF CARBON CLUSTERS EMBEDDED IN SIO2 [J].

HAYASHI, S ;

KATAOKA, M ;

YAMAMOTO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (2B) :L274-L276

[6] CHEMICAL INTERACTION IN ION-IMPLANTED AMORPHOUS SIO2 AND APPLICATION TO FORMATION AND MODIFICATION OF NANOSIZE COLLOID PARTICLES [J].

HOSONO, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 187 :457-472

[7] SITE EFFECT ON THE IMPURITY LEVELS IN H-4, 6H, AND 15R SIC [J].

IKEDA, M ;

MATSUNAMI, H ;

TANAKA, T .

PHYSICAL REVIEW B, 1980, 22 (06) :2842-2854

[8] PHOTOLUMINESCENCE STUDIES OF POROUS SILICON-CARBIDE [J].

KONSTANTINOV, AO ;

HENRY, A ;

HARRIS, CI ;

JANZEN, E .

APPLIED PHYSICS LETTERS, 1995, 66 (17) :2250-2252

[9] INTENSE BLUE EMISSION FROM POROUS BETA-SIC FORMED ON C+-IMPLANTED SILICON [J].

LIAO, LS ;

BAO, XM ;

YANG, ZF ;

MIN, NB .

APPLIED PHYSICS LETTERS, 1995, 66 (18) :2382-2384

[10] BLUE-GREEN LUMINESCENCE FROM POROUS SILICON-CARBIDE [J].

MATSUMOTO, T ;

TAKAHASHI, J ;

TAMAKI, T ;

FUTAGI, T ;

MIMURA, H ;

KANEMITSU, Y .

APPLIED PHYSICS LETTERS, 1994, 64 (02) :226-228

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