Spin related effects in magnetic mesoscopic systems

被引：11

作者：

Barnas, J

Dugaev, V

Krompiewski, S

Martinek, J

Rudzinski, W

Swirkowicz, R

Weymann, I

Wilczynski, M

机构：

[1] Adam Mickiewicz Univ, Dept Phys, PL-61614 Poznan, Poland

[2] Polish Acad Sci, Inst Mol Phys, PL-60179 Poznan, Poland

[3] Inst Super Engn, Dept Elect & Commun, P-1949014 Lisbon, Portugal

[4] Inst Problems Mat Sci, UA-58001 Chernovtsy, Ukraine

[5] Univ Karlsruhe, Inst Theoret Festkorperphys, D-76128 Karlsruhe, Germany

[6] Tech Univ Warsaw, Fac Phys, PL-00662 Warsaw, Poland

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2003年 / 236卷 / 02期

关键词：

D O I：

10.1002/pssb.200301663

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Spin effects in transport properties of double-barrier mesoscopic junctions are analyzed and their possible applications in spintronics devices are discussed. In a general case, external electrodes of the junctions are ferromagnetic and the central electrode is either a nonmagnetic metallic grain or a semiconducting quantum dot. Transport characteristics depend then on magnetic configuration of the system. When the spin relaxation time on the central electrode is sufficiently long, measurable spin effects can also occur in entirely nonmagnetic devices.

引用

页码：246 / 252

页数：7

共 24 条

[1] Effects of spin accumulation on single-electron tunneling in a double ferromagnetic microjunction [J].