Energy-dispersive X-ray reflectivity and GID for real-time growth studies of pentacene thin films

被引：53

作者：

Kowarik, S. ^{[1
]}

Gerlach, A.

Leitenberger, W.

Hu, J.

Witte, G.

Woell, C.

Pietsch, U.

Schreiber, F.

机构：

[1] Univ Tubingen, Inst Angew Phys, D-72076 Tubingen, Germany

[2] Univ Oxford, Oxford OX1 3QZ, England

[3] Univ Potsdam, Inst Phys, D-14469 Potsdam, Germany

[4] Ruhr Univ Bochum, D-44780 Bochum, Germany

[5] Univ Siegen, D-57068 Siegen, Germany

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 14期

基金：

英国工程与自然科学研究理事会;

关键词：

X-ray diffraction; X-ray reflectivity; organic semiconductors; real-time monitoring;

D O I：

10.1016/j.tsf.2006.12.020

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We use energy-dispersive X-ray reflectivity and grazing incidence diffraction (GID) to follow the growth of the crystalline organic semiconductor pentacene on silicon oxide in-situ and in real-time. The technique allows for monitoring Bragg reflections and measuring X-ray growth oscillations with a time resolution of 1 min in a wide q-range in reciprocal space extending over 0.25-0.80 angstrom(-1), i.e. sampling a large number of Fourier components simultaneously. A quantitative analysis of growth oscillations at several q-points yields the evolution of the surface roughness, showing a marked transition from layer-by-layer growth to strong roughening after four monolayers of pentacene have been deposited. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：5606 / 5610

页数：5

共 29 条

[1]

Als-Nielsen J., 2001, ELEMENTS MODERN XRAY

[2] Morphology identification of the thin film phases of vacuum evaporated pentacene on SIO2 substrates [J].

Bouchoms, IPM ;

Schoonveld, WA ;

Vrijmoeth, J ;

Klapwijk, TM .

SYNTHETIC METALS, 1999, 104 (03) :175-178

[3] Origin of electron diffraction oscillations during crystal growth [J].

Braun, W ;

Daweritz, L ;

Ploog, KH .

PHYSICAL REVIEW LETTERS, 1998, 80 (22) :4935-4938

[4]

Brutting W., 2005, Physics of Organic Semiconductors

[5] BIRTH DEATH MODELS OF EPITAXY .1. DIFFRACTION OSCILLATIONS FROM LOW INDEX SURFACES [J].

COHEN, PI ;

PETRICH, GS ;

PUKITE, PR ;

WHALEY, GJ ;

ARROTT, AS .

SURFACE SCIENCE, 1989, 216 (1-2) :222-248

[6]

Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO

[7]

2-9

[8] Rapid roughening in thin film growth of an organic semiconductor (diindenoperylene) -: art. no. 016104 [J].

Dürr, AC ;

Schreiber, F ;

Ritley, KA ;

Kruppa, V ;

Krug, J ;

Dosch, H ;

Struth, B .

PHYSICAL REVIEW LETTERS, 2003, 90 (01) :4

[9] Growth dynamics of pentacene thin films [J].

Heringdorf, FJMZ ;

Reuter, MC ;

Tromp, RM .

NATURE, 2001, 412 (6846) :517-520

[10] Real-time observation of structural and orientational transitions during growth of organic thin films [J].

Kowarik, S ;

Gerlach, A ;

Sellner, S ;

Schreiber, F ;

Cavalcanti, L ;

Konovalov, O .

PHYSICAL REVIEW LETTERS, 2006, 96 (12)

← 1 2 3 →