Optical and electrical properties of porous gallium arsenide

被引：20

作者：

Averkiev, NS ^{[1
]}

Kazakova, LP ^{[1
]}

Lebedev, ÉA ^{[1
]}

Rud', YV ^{[1
]}

Smirnov, AN ^{[1
]}

Smirnova, NN ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2000年 / 34卷 / 06期

关键词：

D O I：

10.1134/1.1188063

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoluminescence (PL), Raman scattering, and carrier transport have been studied for the first time in porous GaAs prepared on (111) oriented wafers of n-type crystalline GaAs (faces A and B). Peaks of the main PL band from faces A and B were observed at 1.82 and 1.88 eV, respectively. The electron drift mobility was found to be similar to 4 x 10(-4) cm(2) V-1 s(-1). The nanocrystallite size in porous GaAs was determined both from PL spectra and from the Raman shift. The obtained values are close or equal to 6-8 nm. (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：732 / 736

页数：5

共 15 条

[1] RAMAN-STUDY OF PHOSPHORUS-IMPLANTED AND PULSED LASER-ANNEALED GAAS [J].

ASHOKAN, R ;

JAIN, KP ;

MAVI, HS ;

BALKANSKI, M .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (06) :1985-1993

[2] QUANTUM-SIZE EFFECT IN THE PHOTOLUMINESCENCE OF POROUS SILICON LAYERS [J].

ASNIN, VM ;

AVERKIEV, NS ;

CHURILOV, AB ;

MARKOV, II ;

MOKROUSOV, NE ;

SILOV, AY ;

STEPANOV, VI .

SOLID STATE COMMUNICATIONS, 1993, 87 (09) :817-820

[3]

BUZYNIN YN, 1996, P 2 RUSS C PHYS SEM, V2, P123

[4] Photoluminescence of porous gallium arsenide [J].

Goryachev, DN ;

Sreseli, OM .

SEMICONDUCTORS, 1997, 31 (11) :1192-1195

[5] Transient space-charge-limited current in porous silicon [J].

Kazakova, LP ;

Lebedev, AA ;

Lebedev, EA .

SEMICONDUCTORS, 1997, 31 (05) :517-518

[6]

Lampert M. A., 1970, CURRENT INJECTION SO

[7]

Lebedev A. A., 1996, Technical Physics Letters, V22, P483

[8] Drift mobility of excess carriers in porous silicon [J].

Lebedev, EA ;

Smorgonskaya, EA ;

Polisski, G .

PHYSICAL REVIEW B, 1998, 57 (23) :14607-14610

[9] Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates [J].

Mamutin, VV ;

Ulin, VP ;

Tret'yakov, VV ;

Ivanov, SV ;

Konnikov, SG ;

Kop'ev, PS .

TECHNICAL PHYSICS LETTERS, 1999, 25 (01) :1-3

[10] Temperature dependence of the photoluminescence of porous silicon [J].

Shimizu, A ;

Yamada, Y ;

Izutsu, G ;

Yano, K ;

Kasuga, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (3A) :L276-L279

← 1 2 →