Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures

被引：58

作者：

Barletta, Philip T. ^{[1
]}

Berkman, E. Acar ^{[1
]}

Moody, Baxter F. ^{[1
]}

El-Masry, Nadia A. ^{[1
]}

Emara, Ahmed M. ^{[1
]}

Reed, Mason J. ^{[1
]}

Bedair, S. M. ^{[1
]}

机构：

[1] N Carolina State Univ, Mat Sci & Engn Dept, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 15期

关键词：

D O I：

10.1063/1.2721133

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors present optical and electrical data for long wavelength (573-601 nm) InGaN/GaN multiple quantum well light emitting diodes (LEDs) grown by metal organic chemical vapor deposition. These results are achieved by optimizing the active layer growth temperature and the quantum well width. Also, the p-GaN is grown at low temperature to avoid the disintegration of the InGaN quantum wells with high InN content. A redshift is observed for both the green and yellow LEDs upon decreasing the injection current at low current regime. In the case of the yellow LED, this shift is enough to push emission into the amber (601 nm). (c) 2007 American Institute of Physics.

引用

页数：3

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