Formation of metallic In in InGaN/GaN multiquantum wells

被引：40

作者：

Van Daele, B ^{[1
]}

Van Tendeloo, G

Jacobs, K

Moerman, I

Leys, MR

机构：

[1] Univ Antwerp, Electron Microscopy Mat Sci EMAT, Antwerp, Belgium

[2] State Univ Ghent, IMEC, Dept Informat Technol INTEC, Ghent, Belgium

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 19期

关键词：

D O I：

10.1063/1.1815054

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InxGa1-xN/GaN light-emitting diode structures with a high In concentration may lose all optical output after capping the active region with a p-type GaN layer. Transmission electron microscopy has been applied to determine the microstructural changes that occur in the quantum-well (QW) region during this capping process. The loss of the optical output is related to a clustering of In into metallic In platelets in the QW region. The properties of these In platelets are described and a formation model is proposed. (C) 2004 American Institute of Physics.

引用

页码：4379 / 4381

页数：3

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