Performance of GaAs JFET at a cryogenic temperature for application to readout circuit of high-impedance detectors

被引：28

作者：

Fujiwara, M ^{[1
]}

Sasaki, M ^{[1
]}

机构：

[1] Natl Inst Informat & Commun Technol, Quantum Informat Technol Grp, Koganei, Tokyo 1848795, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 12期

关键词：

cryogenic temperature; GaAs JFET; high-impedance configuration; random telegraph signal (RTS) noise;

D O I：

10.1109/TED.2004.839756

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A GaAs junction field effect transistor (JFET) is a promising candidate for the cryogenic electronics of high-impedance sensitive photoconductors because of its low-noise at low frequencies. This GaAs JFET has advantages compared with other type of FETs, such as no kink phenomena or hysteresis in its current-voltage (I-V) characteristics, small gate leakage currents, and minute capacitance. We report on the noise spectra and leakage current of a SONY n-type GaAs FET in a high-impedance configuration where the gate terminal was surrounded by high-impedance devices at a cryogenic temperature, i.e., 4.2 K. In the high-impedance configuration, we obtained a low noise level and low leakage current of 0.5 muV/Hz(1/2) at 1 Hz and 4.6 x 10(-19) A. This result implies that the GaAs RET is suitable for cryogenic readout electronics. We also discuss the source of the random telegraph signal and the 1 / f noise in the GaAs JFET at cryogenic temperatures.

引用

页码：2042 / 2047

页数：6

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