Parameter-free quasiparticle calculations for YH3

被引:61
作者
van Gelderen, P
Bobbert, PA
Kelly, PJ
Brocks, G
机构
[1] Twente Univ Technol, Fac Appl Phys, NL-7500 AE Enschede, Netherlands
[2] Twente Univ Technol, MESA Res Inst, NL-7500 AE Enschede, Netherlands
[3] Catholic Univ Nijmegen, Fac Sci, Mat Res Inst, NL-6525 ED Nijmegen, Netherlands
[4] Eindhoven Univ Technol, COBRA Res Sch, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
关键词
D O I
10.1103/PhysRevLett.85.2989
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Electronic structure calculations for YH3 within the local density approximation result in a metallic ground state with the bands at the Fermi energy overlapping by more than 1 eV, whereas a band gap of 2.8 eV is deduced from optical experiments. Here, we report the results of parameter-free GW calculations which predict a fundamental gap of 1 eV. When we take into account electric dipole matrix elements a large optical gap of almost 3 eV is obtained. A combination of photoemission and inverse photoemission spectroscopy could test the prediction of a small fundamental band gap.
引用
收藏
页码:2989 / 2992
页数:4
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共 35 条
[1]   The GW method [J].
Aryasetiawan, F ;
Gunnarsson, O .
REPORTS ON PROGRESS IN PHYSICS, 1998, 61 (03) :237-312
[2]   ELECTRONIC-STRUCTURE OF NIO IN THE GW APPROXIMATION [J].
ARYASETIAWAN, F ;
GUNNARSSON, O .
PHYSICAL REVIEW LETTERS, 1995, 74 (16) :3221-3224
[3]   Nuclear magnetic resonance evidence of disorder and motion in yttrium trideuteride [J].
Balbach, JJ ;
Conradi, MS ;
Hoffmann, MM ;
Udovic, TJ ;
Adolphi, NL .
PHYSICAL REVIEW B, 1998, 58 (22) :14823-14832
[4]   THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686
[5]   SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON [J].
BERNHOLC, J ;
LIPARI, NO ;
PANTELIDES, ST .
PHYSICAL REVIEW B, 1980, 21 (08) :3545-3562
[6]   THE GAP IN YH3 AND ITS LATTICE STRUCTURE [J].
DEKKER, JP ;
VANEK, J ;
LODDER, A ;
HUIBERTS, JN .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (27) :4805-4816
[7]   Visualization of hydrogen migration in solids using switchable mirrors [J].
den Broeder, FJA ;
van der Molen, SJ ;
Kremers, M ;
Huiberts, JN ;
Nagengast, DG ;
van Gogh, ATM ;
Huisman, WH ;
Koeman, NJ ;
Koeman, NI ;
Dam, B ;
Rector, JH ;
Plota, S ;
Haaksma, M ;
Hanzen, RMN ;
Jungblut, RM ;
Duine, PA ;
Griessen, R .
NATURE, 1998, 394 (6694) :656-658
[8]   Kondo-lattice-like effects of hydrogen in transition metals [J].
Eder, R ;
Pen, HF ;
Sawatzky, GA .
PHYSICAL REVIEW B, 1997, 56 (16) :10115-10120
[9]   SELF-ENERGY OPERATORS AND EXCHANGE-CORRELATION POTENTIALS IN SEMICONDUCTORS [J].
GODBY, RW ;
SCHLUTER, M ;
SHAM, LJ .
PHYSICAL REVIEW B, 1988, 37 (17) :10159-10175
[10]   ACCURATE EXCHANGE-CORRELATION POTENTIAL FOR SILICON AND ITS DISCONTINUITY ON ADDITION OF AN ELECTRON [J].
GODBY, RW ;
SCHLUTER, M ;
SHAM, LJ .
PHYSICAL REVIEW LETTERS, 1986, 56 (22) :2415-2418