Fabrication of 30 nm gate length electrically variable shallow-junction metal-oxide-semiconductor field-effect transistors using a calixarene resist

被引：9

作者：

Sakamoto, T ^{[1
]}

Kawaura, H ^{[1
]}

Baba, T ^{[1
]}

Fujita, J ^{[1
]}

Ochiai, Y ^{[1
]}

机构：

[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 305, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 06期

关键词：

D O I：

10.1116/1.589732

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated electrically variable shallow-junction metal-oxide-semiconductor field-effect transistors (EJ-MOSFETs) with an ultrafine gate for the first time. The gate length was reduced to 32 nm by using electron-beam lithography with a calixarene resist, which has an under 10 nm resolution with a sharp pattern edge. Moreover, normal transistor operation of 32 nm gate-length EJ-MOSFETs was confirmed. (C) 1997 American Vacuum Society.

引用

页码：2806 / 2808

页数：3

共 5 条

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[5]

Ono M., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P119, DOI 10.1109/IEDM.1993.347385

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