Accurate nano-EB lithography for 40-nm gate MOSFETs

被引：17

作者：

Ochiai, Y

Manako, S

Samukawa, S

Takeuchi, K

Yamamoto, T

机构：

[1] Fundamental Research Laboratories, NEC Corporation, Tsukuba 305

[2] Microlectron. Research Laboratories, NEC Corporation, Tsukuba 305

来源：

MICROELECTRONIC ENGINEERING | 1996年 / 30卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00276-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanometer electron beam lithography has been used for fabrication of sub-0.1 mu m MOSFETs. Chemically amplified resist as a single layer mask showed high resolution by optimizing the resist process. Proximity effect correction was applied and showed a good line width control. Operation of a 40nm-polysilicon gate NMOSFET was confirmed.

引用

页码：415 / 418

页数：4

共 9 条

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