SiGe bipolar technology for automotive radar applications

被引：121

作者：

Böck, J ^{[1
]}

Schäfer, H ^{[1
]}

Aufinger, K ^{[1
]}

Stengl, R ^{[1
]}

Boguth, S ^{[1
]}

Schreiter, R ^{[1
]}

Rest, M ^{[1
]}

Knapp, H ^{[1
]}

Wurzer, M ^{[1
]}

Perndl, W ^{[1
]}

Böttner, T ^{[1
]}

Meister, TF ^{[1
]}

机构：

[1] Infineon Technol, D-81739 Munich, Germany

来源：

PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2004年

关键词：

D O I：

10.1109/BIPOL.2004.1365751

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A SiGe bipolar technology for automotive radar applications around 77 GHz has been developed. A cut-off frequency of 200 GHz, a maximum oscillation frequency of 275 GHz, and a gate delay of 3.5 ps have been obtained. First key building blocks for 77 GHz; systems like VCOs and mixers have been realized with this technology.

引用

页码：84 / 87

页数：4

共 6 条

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