Tri-layer systems for nanoimprint lithography with an improved process latitude

被引:37
作者
Lebib, A [1 ]
Chen, Y [1 ]
Carcenac, F [1 ]
Cambril, E [1 ]
Manin, L [1 ]
Couraud, L [1 ]
Launois, H [1 ]
机构
[1] CNRS, Microstruct & Microelect Lab, F-92225 Bagneux, France
关键词
D O I
10.1016/S0167-9317(00)00290-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present two tri-layer systems which can be used to improve the process latitude of nanoimprint lithography. By hot empossing, the top layer polymer can easily deformed while the bottom layer, separated by a 10 nm thick germanium from the top layer, remains to be thermally stable. With a sequential reactive ion etching, the top layer image can be transferred into the bottom layer with a large thickness contrast, thereby providing a way to generate dense features with high aspect ratio. Consequently, commonly used pattern-transfer techniques such as lift-off, reactive ion etching and electrodeposition can be employed.
引用
收藏
页码:175 / 178
页数:4
相关论文
共 5 条
  • [1] CHEN Y, 1997, MICROELECTRON ENG, V46, P319
  • [2] Sub-10 nm imprint lithography and applications
    Chou, SY
    Krauss, PR
    Zhang, W
    Guo, LJ
    Zhuang, L
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06): : 2897 - 2904
  • [3] IMPRINT OF SUB-25 NM VIAS AND TRENCHES IN POLYMERS
    CHOU, SY
    KRAUSS, PR
    RENSTROM, PJ
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (21) : 3114 - 3116
  • [4] LEBIB A, 1998, MICROELECTRON ENG, V41, P275
  • [5] Multilayer resist methods for nanoimprint lithography on nonflat surfaces
    Sun, XY
    Zhuang, L
    Zhang, W
    Chou, SY
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06): : 3922 - 3925