Focussed ion beam induced damage in silicon studied by scanning capacitance microscopy

被引：8

作者：

Brezna, W

Wanzenböck, H

Lugstein, A

Bertagnolli, E

Gornik, E

Smoliner, J

机构：

[1] TU Wien, Inst Festkorperektr, A-1040 Vienna, Austria

[2] TU Wien, Mikrostrukturzentrum, A-1040 Vienna, Austria

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2003年 / 18卷 / 04期

关键词：

D O I：

10.1088/0268-1242/18/4/301

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we explore the application of scanning capacitance microscopy (SCM) for studying focussed ion beam (FIB) induced damage in silicon. We qualitatively determine the technologically important beam shape by measuring the SCM image of FIB processed implantation spots, and by comparison of topographical and SCM data. Further, we investigate how deep impinging ions generate measurable damage below the silicon surface. For this purpose, trenches were manufactured using FIB and analysed by SCM in cross-sectional geometry.

引用

页码：195 / 198

页数：4

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