LOCALIZED THINNING OF GAAS/GAALAS NANOSTRUCTURES BY A COMBINED SCANNING ELECTRON MICROGRAPH FOCUS ION-BEAM SYSTEM FOR HIGH-QUALITY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY SAMPLES

被引：7

作者：

ASSAYAG, GB ^{[1
]}

VIEU, C ^{[1
]}

GIERAK, J ^{[1
]}

CHAABANE, H ^{[1
]}

PEPIN, A ^{[1
]}

HENOC, P ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,LAB BAGNEUX,F-92225 BAGNEUX,FRANCE

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 03期

关键词：

D O I：

10.1116/1.586840

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new versatile procedure combining conventional lithography and focused ion beam coupled to scanning electron microscopy to micromachine high-quality cross-sectional transmission electron microscopy (TEM) samples is proposed. Electron transparent areas are generated with a high degree of localization, within 0.1 mum, over distances of several millimeters in GaAs/GaAlAs heterostructures. TEM observations demonstrate that no defects are introduced during the thinning process and different conditions of illumination are achievable.

引用

页码：531 / 535

页数：5

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