A NEW CROSS-SECTIONAL THINNING TECHNIQUE FOR TRANSMISSION ELECTRON-MICROSCOPY

被引：9

作者：

SWEENEY, J

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.583082

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：918 / 920

页数：3

共 10 条

[1] CROSS-SECTIONAL SPECIMENS FOR TRANSMISSION ELECTRON-MICROSCOPY [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) :3315-3316

[2]

ANDERSON EH, UNPUB 1983 INT EL IO

[3] GAAS AND ALGAAS ANISOTROPIC FINE PATTERN ETCHING USING A NEW REACTIVE ION-BEAM ETCHING SYSTEM [J].

ASAKAWA, K ;

SUGATA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :402-405

[4] RAPID MELTING AND REGROWTH VELOCITIES IN SILICON HEATED BY ULTRAVIOLET PICOSECOND LASER-PULSES [J].

BUCKSBAUM, PH ;

BOKOR, J .

PHYSICAL REVIEW LETTERS, 1984, 53 (02) :182-185

[5] ION-BEAM PROCESSING USING METAL ON POLYMER MASKS [J].

HU, EL ;

HOWARD, RE ;

GRABBE, P ;

TENNANT, DM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (05) :1171-1173

[6] SELECTIVE ETCHING OF SI RELATIVE TO SIO2 WITHOUT UNDERCUTTING BY CBRF3 PLASMA [J].

MATSUO, S .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :768-770

[7] MICROSCOPIC CIRCUIT FABRICATION ON REFRACTORY SUPERCONDUCTING FILMS [J].

PALMER, DW ;

DECKER, SK .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1973, 44 (11) :1621-1624

[8]

SHENG TT, 1976, IEEE T ELECTRON DEV, V23, P531, DOI 10.1109/T-ED.1976.18447

[9] ADVANCES IN TRANSMISSION ELECTRON-MICROSCOPE TECHNIQUES APPLIED TO DEVICE FAILURE ANALYSIS [J].

SHENG, TT ;

MARCUS, RB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) :737-743

[10]

AZ351 AM HOECHST COR

← 1 →