SELECTIVE ETCHING OF SI RELATIVE TO SIO2 WITHOUT UNDERCUTTING BY CBRF3 PLASMA

被引：48

作者：

MATSUO, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 09期

关键词：

D O I：

10.1063/1.91651

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：768 / 770

页数：3

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[1] ABE H, 1975, J JAPAN SOC APPL P S, V44, P287
[2] ION-SURFACE INTERACTIONS IN PLASMA ETCHING
COBURN, JW
WINTERS, HF
CHUANG, TJ
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540
[3] PREFERENTIAL SIO2 ETCHING ON SI SUBSTRATE BY PLASMA REACTIVE SPUTTER ETCHING
MATSUO, S
TAKEHARA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (01) : 175 - 176
[4] ETCHING CHARACTERISTICS OF VARIOUS MATERIALS BY PLASMA REACTIVE SPUTTER ETCHING
MATSUO, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (01) : 235 - 236
[5] MURAMOTO S, 1978 IEEE INT EL DEV
[6] PLASMA ETCHING IN INTEGRATED-CIRCUIT MANUFACTURE - REVIEW
POULSEN, RG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 266 - 274
[7] REACTIVE ION ETCHING OF ALUMINUM AND ALUMINUM-ALLOYS IN AN RF PLASMA CONTAINING HALOGEN SPECIES
SCHAIBLE, PM
METZGER, WC
ANDERSON, JP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 334 - 337