ETCHING CHARACTERISTICS OF VARIOUS MATERIALS BY PLASMA REACTIVE SPUTTER ETCHING

被引：26

作者：

MATSUO, S

机构：

[1] Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 01期

关键词：

D O I：

10.1143/JJAP.17.235

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

收藏

页码：235 / 236

页数：2

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[2] ETCHING CHARACTERISTICS OF SILICATE GLASS-FILMS IN CF4 PLASMA
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : 1258 - 1262
[3] PREFERENTIAL SIO2 ETCHING ON SI SUBSTRATE BY PLASMA REACTIVE SPUTTER ETCHING
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TAKEHARA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (01) : 175 - 176